Body Voltage Sensing Based Short Pulse Reading Circuit

TitleBody Voltage Sensing Based Short Pulse Reading Circuit
Publication TypePatent
Year of Publication2014
AuthorsWang, K-L, Yang, C-KK, Markovic, D, Ren, F
International Patent NumberWO2013043738A1
Application NumberPCT/US2012/056136
Date PublishedMar 28, 2013
Patent NumberUS8917562B2
Keywords (or New Research Field)psclab

As memory geometries continue to scale down, current density of magnetic tunnel junctions (MTJs) make conventional low current reading scheme problematic with regard to performance and reliability. A body-voltage sense circuit (BVSC) short pulse reading (SPR) circuit is described using body connected load transistors and a novel sensing circuit with second stage amplifier which allows for very short read pulses providing much higher read margins, less sensing time, and shorter sensing current pulses. Simulation results (using 65-nm CMOS model SPICE simulations) show that our technique can achieve 550 mV of read margin at 1 ns performance under a 1 V supply voltage, which is greater than reference designs achieve at 5 ns performance.