@inproceedings {Rhodes Island, Greece, title = {Enhanced Low-resolution LiDAR-Camera Calibration Via Depth Interpolation and Supervised Contrastive Learning}, year = {2023}, month = {06/2023}, address = {Rhodes Island, Greece}, keywords = {psclab}, author = {Zhikang Zhang and Zifan Yu and Suya You and Raghuveer Rao and Sanjeev Agarwal and Fengbo Ren} } @inproceedings {31, title = {See UV on Your Skin: An Ultraviolet Sensing and Visualization System}, year = {2013}, month = {09/2013}, pages = {22-28}, publisher = {ICST (Institute for Computer Sciences, Social-Informatics and Telecommunications Engineering)}, abstract = {

These days, as the Earth{\textquoteright}s protective ozone layer gets thinner, ultraviolet (UV) radiation threat is growing. In addition, getting tanned as a fashion leads people to wear less clothing, which increases UV intake. Excessive exposure to ultraviolet will lead to sunburn and even skin cancer. Therefore, neither insufficient nor excessive exposure is desirable. Although there are tons of UV meters on the market, a user may have a hard time to understand the unintuitive UV index reading. Thus, there is a potential demand for a portable system which can keep track of daily UV exposure dose, visualize possible sunburned consequences, and provide appropriate skin care recommendations. In this paper, we present a personalized UV monitoring and notification system. This system can continuously track UV exposure by wearable UV sensors. It can also visualize the cumulative UV exposure dose according to a predictive sunburned skin color model. Such an augmented skin color can provide a warning message to indicate the possible result of continuous UV exposure. Compared with other existing systems, our solution not only allows users to monitor their daily UV exposure, but also provides an unobtrusive UV visualization model which effectively warns users to take appropriate actions to avoid potential skin damage. The system has been tested on 9 subjects, and the evaluation feedback indicates that our system is promising for UV monitoring and sunburn prevention.

}, keywords = {psclab}, url = {http://dl.acm.org/citation.cfm?id=2555324}, author = {Zhang, Xiaoyi and Xu, Wenyao and Huang, Ming-Chun and Amini, Navid and Ren, Fengbo} } @inproceedings {25, title = {Analysis of STT-RAM Cell Design With Multiple MTJs Per Access}, year = {2011}, month = {01/2011}, pages = {53-58}, publisher = {IEEE Computer Society}, abstract = {

Density of STT-RAMs is limited by the area cost and width of the access device in a cell since it needs to support the programming currents. This paper explores a cell structure that shares each cell{\textquoteright}s access transistor with multiple MTJ memory elements. Feasibility and limitations of such a cell structure is explored for both reading and writing of the memory. The analytical and simulation results indicate that only small amount of sharing is possible and having MTJs that can handle a high read current without disturbing the cell is needed.

}, keywords = {psclab}, url = {http://dl.acm.org/citation.cfm?id=2052103}, author = {Park, Henry and Dorrance, Richard and Amin, Amr and Ren, Fengbo and Markovi{\'c}, Dejan and Ken Yang, CK} } @inproceedings {24, title = {Scalability And Design-space Analysis of A 1T-1MTJ Memory Cell}, year = {2011}, month = {01/2011}, pages = {32-36}, publisher = {IEEE}, abstract = {

This paper introduces a design-space feasibility region as a function of MTJ characteristics and memory target specifications. The sensitivity of the design space is analyzed for scaling of both MTJ and underlying transistor technology. Design points for improved yield, density, and memory performance can be extracted for 90nm down to 32nm processes based on measured MTJ devices. To achieve flash-like densities in upcoming 22nm and 16nm technology nodes, scaling of the critical switching current density is required.

}, keywords = {psclab}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5941480}, author = {Dorrance, Richard and Ren, Fengbo and Toriyama, Yuta and Amin, Amr and Yang, C-KK and Markovi{\'c}, Dejan} }